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	Resistive switching memory of single BiMnO3+delta nanorods
	Yan, YM; Sun, B; Ma, DJ
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2016
卷号	Vol.27 No.1页码:512-516
ISSN号	0957-4522
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6069439
专题	湖南大学
作者单位	1.Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 2.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China 3.Southwest Univ, Ctr Studies Educ & Psychol Ethn Minor Southwest C, Chongqing 400715, Peoples R China
推荐引用方式 GB/T 7714	Yan, YM,Sun, B,Ma, DJ. Resistive switching memory of single BiMnO3+delta nanorods[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,Vol.27 No.1:512-516.
APA	Yan, YM,Sun, B,&Ma, DJ.(2016).Resistive switching memory of single BiMnO3+delta nanorods.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,Vol.27 No.1,512-516.
MLA	Yan, YM,et al."Resistive switching memory of single BiMnO3+delta nanorods".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol.27 No.1(2016):512-516.

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