How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m | |
Huang JL (Huang, Jianliang) ; Ma WQ (Ma, Wenquan) ; Wei Y (Wei, Yang) ; Zhang YH (Zhang, Yanhua) ; Cui K (Cui, Kai) ; Cao YL (Cao, Yulian) ; Guo XL (Guo, Xiaolu) ; Shao J (Shao, Jun) | |
刊名 | ieee journal of quantum electronics
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2012 | |
卷号 | 48期号:10页码:1322-1326 |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-03-26 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/23795] ![]() |
专题 | 半导体研究所_纳米光电子实验室 |
推荐引用方式 GB/T 7714 | Huang JL ,Ma WQ ,Wei Y ,et al. How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m[J]. ieee journal of quantum electronics,2012,48(10):1322-1326. |
APA | Huang JL .,Ma WQ .,Wei Y .,Zhang YH .,Cui K .,...&Shao J .(2012).How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m.ieee journal of quantum electronics,48(10),1322-1326. |
MLA | Huang JL ,et al."How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m".ieee journal of quantum electronics 48.10(2012):1322-1326. |
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