Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

	Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
	Chen P (Chen, P.) ; Feng MX (Feng, M. X.) ; Jiang DS (Jiang, D. S.) ; Zhao DG (Zhao, D. G.) ; Liu ZS (Liu, Z. S.) ; Li L (Li, L.) ; Wu LL (Wu, L. L.) ; Le LC (Le, L. C.) ; Zhu JJ (Zhu, J. J.) ; Wang H (Wang, H.) ; Zhang SM (Zhang, S. M.) ; Yang H (Yang, H.)
刊名	journal of applied physics
	2012
卷号	112 期号:11 页码:113105
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2013-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23764]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Chen P ,Feng MX ,Jiang DS ,et al. Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer[J]. journal of applied physics,2012,112(11):113105.
APA	Chen P .,Feng MX .,Jiang DS .,Zhao DG .,Liu ZS .,...&Yang H .(2012).Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer.journal of applied physics,112(11),113105.
MLA	Chen P ,et al."Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer".journal of applied physics 112.11(2012):113105.