Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire

	Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire
	Zhao GJ (Zhao Gui-Juan) ; Li ZW (Li Zhi-Wei) ; Wei HY (Wei Hong-Yuan) ; Liu GP (Liu Gui-Peng) ; Liu XL (Liu Xiang-Lin) ; Yang SY (Yang Shao-Yan) ; Zhu QS (Zhu Qin-Sheng) ; Wang ZG (Wang Zhan-Guo)
刊名	chinese physics letters
	2012
卷号	29 期号:11 页码:117103
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23777]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhao GJ ,Li ZW ,Wei HY ,et al. Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire[J]. chinese physics letters,2012,29(11):117103.
APA	Zhao GJ .,Li ZW .,Wei HY .,Liu GP .,Liu XL .,...&Wang ZG .(2012).Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire.chinese physics letters,29(11),117103.
MLA	Zhao GJ ,et al."Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire".chinese physics letters 29.11(2012):117103.