Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode | |
Li, GL; Kilchytska, V; Andre, N; Francis, LA; Zeng, Y; Flandre, D | |
刊名 | IEEE Transactions on Electron Devices |
2017 | |
卷号 | Vol.64 No.10页码:4252-4259 |
关键词 | P-i-n diodes Leakage currents Annealing Performance evaluation Silicon Optical sensors Silicon-on-insulator Annealing characterization dark leakage current interface traps low-frequency noise (LFN) P⁺P⁻N⁺ (p-i-n) diode silicon on insulator (SOI) simulation |
ISSN号 | 0018-9383;1557-9646 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6046573 |
专题 | 湖南大学 |
作者单位 | 1.Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 2.Catholic Univ Louvain, Inst Informat & Commun Technol Elect & Appl Math, B-1348 Louvain La Neuve, Belgium 3.Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium |
推荐引用方式 GB/T 7714 | Li, GL,Kilchytska, V,Andre, N,et al. Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode[J]. IEEE Transactions on Electron Devices,2017,Vol.64 No.10:4252-4259. |
APA | Li, GL,Kilchytska, V,Andre, N,Francis, LA,Zeng, Y,&Flandre, D.(2017).Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode.IEEE Transactions on Electron Devices,Vol.64 No.10,4252-4259. |
MLA | Li, GL,et al."Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode".IEEE Transactions on Electron Devices Vol.64 No.10(2017):4252-4259. |
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