A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor | |
Liao, L.; Wang, J.; Tang, S.; Shuai, Z.; Yin, X.; Shen, Z.J. | |
刊名 | IEEE Transactions on Power Electronics
![]() |
2017 | |
卷号 | Vol.32 No.6页码:4600-4606 |
关键词 | Base drive technique bipolar junction transistor proportional base drive silicon carbide |
ISSN号 | 0885-8993 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6041337 |
专题 | 湖南大学 |
作者单位 | College of Electrical and Information Engineering, Hunan University, Changsha, China |
推荐引用方式 GB/T 7714 | Liao, L.,Wang, J.,Tang, S.,et al. A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor[J]. IEEE Transactions on Power Electronics,2017,Vol.32 No.6:4600-4606. |
APA | Liao, L.,Wang, J.,Tang, S.,Shuai, Z.,Yin, X.,&Shen, Z.J..(2017).A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor.IEEE Transactions on Power Electronics,Vol.32 No.6,4600-4606. |
MLA | Liao, L.,et al."A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor".IEEE Transactions on Power Electronics Vol.32 No.6(2017):4600-4606. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论