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	Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering
	Miao, Yuanhao; Wang, Yibo; Hu, Huiyong; Liu, Xiangyu; Su, Han; Zhang, Jing; Yang, Jiayin; Tang, Zhaohuan; Wu, Xue; Song, Jianjun
	2018
卷号	85页码:134-140
URL标识	查看原文
WOS记录号	WOS:000436649200017
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6024907
专题	贵州大学
作者单位	1.[1]Key Lab Wide Gap Semicond Mat & Devices, 2 Taibai Rd, Xian 710071, Shaanxi, Peoples R China 2.[2]Sci & Technol Analog Integrated Circuit Lab, 14 Nanping Pk Rd, Chongqing 400060, Peoples R China 3.[3]Guizhou Univ, Coll Big Data & Informat Engn, 67 Nanya Rd, Guiyang 550025, Guizhou, Peoples R China
推荐引用方式 GB/T 7714	Miao, Yuanhao,Wang, Yibo,Hu, Huiyong,et al. Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering[J],2018,85:134-140.
APA	Miao, Yuanhao.,Wang, Yibo.,Hu, Huiyong.,Liu, Xiangyu.,Su, Han.,...&Zhang, Heming.(2018).Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering.,85,134-140.
MLA	Miao, Yuanhao,et al."Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering".85(2018):134-140.

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