Growth of nanocrystalline silicon films by helicon wave plasma chemical vapour deposition | |
Yu, W[1]; Wang, BZ[2]; Lu, WB[3]; Yang, YB[4]; Han, L[5]; Fu, GS[6] | |
刊名 | CHINESE PHYSICS LETTERS
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2004 | |
卷号 | 21期号:7页码:1320-1322 |
ISSN号 | 0256-307X |
URL标识 | 查看原文 |
收录类别 | SCI(E) |
WOS记录号 | WOS:000222542100038 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5998123 |
专题 | 河北大学 |
作者单位 | Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. |
推荐引用方式 GB/T 7714 | Yu, W[1],Wang, BZ[2],Lu, WB[3],et al. Growth of nanocrystalline silicon films by helicon wave plasma chemical vapour deposition[J]. CHINESE PHYSICS LETTERS,2004,21(7):1320-1322. |
APA | Yu, W[1],Wang, BZ[2],Lu, WB[3],Yang, YB[4],Han, L[5],&Fu, GS[6].(2004).Growth of nanocrystalline silicon films by helicon wave plasma chemical vapour deposition.CHINESE PHYSICS LETTERS,21(7),1320-1322. |
MLA | Yu, W[1],et al."Growth of nanocrystalline silicon films by helicon wave plasma chemical vapour deposition".CHINESE PHYSICS LETTERS 21.7(2004):1320-1322. |
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