Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics | |
Peng, YC[1]; Fu, GS[2]; Yu, W[3]; Li, SQ[4]; Wang, YL[5] | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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2004 | |
卷号 | 19期号:6页码:759-763 |
ISSN号 | 0268-1242 |
DOI | http://dx.doi.org/10.1088/0268-1242/19/6/018 |
URL标识 | 查看原文 |
收录类别 | SCI(E) |
WOS记录号 | WOS:000222252100020 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5998103 |
专题 | 河北大学 |
作者单位 | 1.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China. 2.Chinese Acad Sci, Inst Phys, Lab Nanophys & Nanodevices, Beijing 100080, Peoples R China. 3.Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 4.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
推荐引用方式 GB/T 7714 | Peng, YC[1],Fu, GS[2],Yu, W[3],et al. Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(6):759-763. |
APA | Peng, YC[1],Fu, GS[2],Yu, W[3],Li, SQ[4],&Wang, YL[5].(2004).Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(6),759-763. |
MLA | Peng, YC[1],et al."Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.6(2004):759-763. |
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