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	Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics
	Peng, YC[1]; Fu, GS[2]; Yu, W[3]; Li, SQ[4]; Wang, YL[5]
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2004
卷号	19期号:6页码:759-763
ISSN号	0268-1242
DOI	http://dx.doi.org/10.1088/0268-1242/19/6/018
URL标识	查看原文
收录类别	SCI(E)
WOS记录号	WOS:000222252100020
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5998103
专题	河北大学
作者单位	1.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China. 2.Chinese Acad Sci, Inst Phys, Lab Nanophys & Nanodevices, Beijing 100080, Peoples R China. 3.Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 4.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Peng, YC[1],Fu, GS[2],Yu, W[3],et al. Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(6):759-763.
APA	Peng, YC[1],Fu, GS[2],Yu, W[3],Li, SQ[4],&Wang, YL[5].(2004).Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(6),759-763.
MLA	Peng, YC[1],et al."Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.6(2004):759-763.

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