Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition | |
Wang, YL[1]; Fu, GS[2]; Peng, YC[3]; Zhou, Y[4]; Chu, LZ[5]; Zhang, RM[6] | |
刊名 | CHINESE PHYSICS LETTERS
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2004 | |
卷号 | 21期号:1页码:201-202 |
ISSN号 | 0256-307X |
URL标识 | 查看原文 |
收录类别 | SCI(E) |
WOS记录号 | WOS:000188470900060 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5998022 |
专题 | 河北大学 |
作者单位 | 1.Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 2.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China. |
推荐引用方式 GB/T 7714 | Wang, YL[1],Fu, GS[2],Peng, YC[3],et al. Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition[J]. CHINESE PHYSICS LETTERS,2004,21(1):201-202. |
APA | Wang, YL[1],Fu, GS[2],Peng, YC[3],Zhou, Y[4],Chu, LZ[5],&Zhang, RM[6].(2004).Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition.CHINESE PHYSICS LETTERS,21(1),201-202. |
MLA | Wang, YL[1],et al."Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition".CHINESE PHYSICS LETTERS 21.1(2004):201-202. |
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