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	Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition
	Wang, YL[1]; Fu, GS[2]; Peng, YC[3]; Zhou, Y[4]; Chu, LZ[5]; Zhang, RM[6]
刊名	CHINESE PHYSICS LETTERS
	2004
卷号	21期号:1页码:201-202
ISSN号	0256-307X
URL标识	查看原文
收录类别	SCI(E)
WOS记录号	WOS:000188470900060
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5998022
专题	河北大学
作者单位	1.Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China. 2.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Wang, YL[1],Fu, GS[2],Peng, YC[3],et al. Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition[J]. CHINESE PHYSICS LETTERS,2004,21(1):201-202.
APA	Wang, YL[1],Fu, GS[2],Peng, YC[3],Zhou, Y[4],Chu, LZ[5],&Zhang, RM[6].(2004).Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition.CHINESE PHYSICS LETTERS,21(1),201-202.
MLA	Wang, YL[1],et al."Influence of inert gas pressure on growing rate of nanocrystalline silicon film prepared by pulsed laser deposition".CHINESE PHYSICS LETTERS 21.1(2004):201-202.

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