| A novel crystallization pathway for SiGe alloy rapid cooling | |
| Guo, Xiaotian; Tian, Zean; Gao, Tinghong; Xie, Quan; Liang, Yongchao; Mo, Yunfei; Yan, Wanjun | |
| 2017 | |
| 卷号 | 19期号:6页码:4695-4700 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000395526600059 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5986510 |
| 专题 | 贵州大学 |
| 作者单位 | 1.[1]Guizhou Univ, Coll Big Data & Informat Engn, Guiyang 550025, Peoples R China 2.[2]Anshun Univ, Sch Math & Phys, Anshun 561000, Peoples R China 3.[3]Inst New Type Optoelect Mat & Technol, Guiyang 550025, Peoples R China 4.[4]Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 5.[5]Anshun Univ, Sch Elect & Informat Engn, Anshun 561000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Xiaotian,Tian, Zean,Gao, Tinghong,et al. A novel crystallization pathway for SiGe alloy rapid cooling[J],2017,19(6):4695-4700. |
| APA | Guo, Xiaotian.,Tian, Zean.,Gao, Tinghong.,Xie, Quan.,Liang, Yongchao.,...&Yan, Wanjun.(2017).A novel crystallization pathway for SiGe alloy rapid cooling.,19(6),4695-4700. |
| MLA | Guo, Xiaotian,et al."A novel crystallization pathway for SiGe alloy rapid cooling".19.6(2017):4695-4700. |
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