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	Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy
	Yu Wei[1]; Wang Chun-Sheng[2]; Lu Wan-Bing[3]; He Jie[4]; Han Xiao-Xia[5]; Fu Guang-Sheng[6]
刊名	CHINESE PHYSICS
	2007
卷号	16期号:8页码:2310-2314
关键词	microcrystalline silicon defect states surface photovoltaic spectroscopy
ISSN号	1009-1963
URL标识	查看原文
收录类别	SCI(E)
WOS记录号	WOS:000248657200025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5973556
专题	河北大学
作者单位	Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China.
推荐引用方式 GB/T 7714	Yu Wei[1],Wang Chun-Sheng[2],Lu Wan-Bing[3],et al. Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy[J]. CHINESE PHYSICS,2007,16(8):2310-2314.
APA	Yu Wei[1],Wang Chun-Sheng[2],Lu Wan-Bing[3],He Jie[4],Han Xiao-Xia[5],&Fu Guang-Sheng[6].(2007).Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy.CHINESE PHYSICS,16(8),2310-2314.
MLA	Yu Wei[1],et al."Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy".CHINESE PHYSICS 16.8(2007):2310-2314.

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