| Multi-breakdown model for explaining the formation and growth of black spots in PZT capacitor under DC bias | |
| Zheng, Deyi; Luo, Min; Swingler, Jonathan | |
| 2016 | |
| 卷号 | 241页码:197-202 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000374074400023 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5970876 |
| 专题 | 贵州大学 |
| 作者单位 | 1.[1]Guizhou Univ, Coll Mat & Met, Guiyang 550025, Guizhou, Peoples R China 2.[2]Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland |
| 推荐引用方式 GB/T 7714 | Zheng, Deyi,Luo, Min,Swingler, Jonathan. Multi-breakdown model for explaining the formation and growth of black spots in PZT capacitor under DC bias[J],2016,241:197-202. |
| APA | Zheng, Deyi,Luo, Min,&Swingler, Jonathan.(2016).Multi-breakdown model for explaining the formation and growth of black spots in PZT capacitor under DC bias.,241,197-202. |
| MLA | Zheng, Deyi,et al."Multi-breakdown model for explaining the formation and growth of black spots in PZT capacitor under DC bias".241(2016):197-202. |
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