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	A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation
	Liu, L.; Yue, S.; Lu, S.
刊名	Journal of Semiconductors
	2015
卷号	36
关键词	Nanotechnology Radiation hardening 65-nm technologies CMOS test chip Hardened-by-design Multi-nodes Orders of magnitude Radiation experiment SEU cross-section Single event upsets Static random access storage
ISSN号	16744926
DOI	10.1088/1674-4926/36/11/115007
URL标识	查看原文
收录类别	EI ; ISTICCSCD
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5961362
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Liu, L.,Yue, S.,Lu, S.. A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation[J]. Journal of Semiconductors,2015,36.
APA	Liu, L.,Yue, S.,&Lu, S..(2015).A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation.Journal of Semiconductors,36.
MLA	Liu, L.,et al."A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation".Journal of Semiconductors 36(2015).

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