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	Modeling and simulation of single-event effect in CMOS circuit
	Yue, S.; Zhang, X.; Zhao, Y.; Liu, L.; Wang, H.
刊名	Journal of Semiconductors
	2015
卷号	36
关键词	Bipolar semiconductor devices CMOS integrated circuits Digital devices Digital storage High electron mobility transistors Integrated circuits Ionization Ionizing radiation Nanotechnology Radiation hardening Reconfigurable hardware Semiconductor devices Charge collection Charge sharing effects Circuit-level simulation Model and simulation Multi-nodes Single event effects Single event transients Single event upsets Transients
ISSN号	16744926
DOI	10.1088/1674-4926/36/11/111002
URL标识	查看原文
收录类别	EI ; ISTICCSCD
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5961350
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Yue, S.,Zhang, X.,Zhao, Y.,et al. Modeling and simulation of single-event effect in CMOS circuit[J]. Journal of Semiconductors,2015,36.
APA	Yue, S.,Zhang, X.,Zhao, Y.,Liu, L.,&Wang, H..(2015).Modeling and simulation of single-event effect in CMOS circuit.Journal of Semiconductors,36.
MLA	Yue, S.,et al."Modeling and simulation of single-event effect in CMOS circuit".Journal of Semiconductors 36(2015).

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