| Modeling and simulation of single-event effect in CMOS circuit |
| Yue, S.; Zhang, X.; Zhao, Y.; Liu, L.; Wang, H.
|
刊名 | Journal of Semiconductors
![](/image/waiting.gif) |
| 2015
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卷号 | 36 |
关键词 | Bipolar semiconductor devices
CMOS integrated circuits
Digital devices
Digital storage
High electron mobility transistors
Integrated circuits
Ionization
Ionizing radiation
Nanotechnology
Radiation hardening
Reconfigurable hardware
Semiconductor devices
Charge collection
Charge sharing effects
Circuit-level simulation
Model and simulation
Multi-nodes
Single event effects
Single event transients
Single event upsets
Transients
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ISSN号 | 16744926
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DOI | 10.1088/1674-4926/36/11/111002
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URL标识 | 查看原文
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收录类别 | EI
; ISTICCSCD
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内容类型 | 期刊论文
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URI标识 | http://www.corc.org.cn/handle/1471x/5961350
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专题 | 北京航空航天大学
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推荐引用方式 GB/T 7714 |
Yue, S.,Zhang, X.,Zhao, Y.,et al. Modeling and simulation of single-event effect in CMOS circuit[J]. Journal of Semiconductors,2015,36.
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APA |
Yue, S.,Zhang, X.,Zhao, Y.,Liu, L.,&Wang, H..(2015).Modeling and simulation of single-event effect in CMOS circuit.Journal of Semiconductors,36.
|
MLA |
Yue, S.,et al."Modeling and simulation of single-event effect in CMOS circuit".Journal of Semiconductors 36(2015).
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