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	Analysis and RHBD technique of single event transients in PLLs
	Han, Z.; Wang, L.; Yue, S.; Han, B.; Du, S.
刊名	Journal of Semiconductors
	2015
卷号	36
关键词	Hardening Hardness Heavy ions High electron mobility transistors Locks (fasteners) Nanotechnology Phase locked loops Radiation effects Radiation hardening Reconfigurable hardware Heavy ion testing Phase Locked Loop (PLL) Radiation hardening by design Radiation hardness Sensitive components Single event transients System levels Transistor level Transients
ISSN号	16744926
DOI	10.1088/1674-4926/36/11/115001
URL标识	查看原文
收录类别	EI ; ISTICCSCD
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5961344
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Han, Z.,Wang, L.,Yue, S.,et al. Analysis and RHBD technique of single event transients in PLLs[J]. Journal of Semiconductors,2015,36.
APA	Han, Z.,Wang, L.,Yue, S.,Han, B.,&Du, S..(2015).Analysis and RHBD technique of single event transients in PLLs.Journal of Semiconductors,36.
MLA	Han, Z.,et al."Analysis and RHBD technique of single event transients in PLLs".Journal of Semiconductors 36(2015).

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