| Complementary Skyrmion Racetrack Memory With Voltage Manipulation | |
| Kang, Wang; Zheng, Chentian; Huang, Yangqi; Zhang, Xichao; Zhou, Yan; Lv, Weifeng; Zhao, Weisheng | |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 2016 | |
| 卷号 | 37页码:924-927 |
| 关键词 | Magnetic skyrmion domain wall racetrack memory voltage manipulation |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2016.2574916 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| WOS记录号 | WOS:000379940600027 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5958685 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Kang, Wang,Zheng, Chentian,Huang, Yangqi,et al. Complementary Skyrmion Racetrack Memory With Voltage Manipulation[J]. IEEE ELECTRON DEVICE LETTERS,2016,37:924-927. |
| APA | Kang, Wang.,Zheng, Chentian.,Huang, Yangqi.,Zhang, Xichao.,Zhou, Yan.,...&Zhao, Weisheng.(2016).Complementary Skyrmion Racetrack Memory With Voltage Manipulation.IEEE ELECTRON DEVICE LETTERS,37,924-927. |
| MLA | Kang, Wang,et al."Complementary Skyrmion Racetrack Memory With Voltage Manipulation".IEEE ELECTRON DEVICE LETTERS 37(2016):924-927. |
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