| Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair | |
| Yuan, Heng; Zhang, Jixing; Cao, Chuangui; Zhang, Gangyuan; Zhang, Shaoda | |
| 刊名 | SENSORS
 |
| 2016 | |
| 卷号 | 16 |
| 关键词 | gated lateral BJT MOSFET-BJT hybrid ion sensor ISFET |
| ISSN号 | 1424-8220 |
| DOI | 10.3390/s16010014 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI ; PUBMED |
| WOS记录号 | WOS:000370679900038 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5957042 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Yuan, Heng,Zhang, Jixing,Cao, Chuangui,et al. Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair[J]. SENSORS,2016,16. |
| APA | Yuan, Heng,Zhang, Jixing,Cao, Chuangui,Zhang, Gangyuan,&Zhang, Shaoda.(2016).Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair.SENSORS,16. |
| MLA | Yuan, Heng,et al."Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair".SENSORS 16(2016). |
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