Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions | |
Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin | |
刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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2016 | |
卷号 | 18页码:27750-27753 |
ISSN号 | 1463-9076 |
DOI | 10.1039/c6cp04752a |
URL标识 | 查看原文 |
收录类别 | SCIE ; PUBMED |
WOS记录号 | WOS:000385180600007 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5956477 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Wang, Cong,Yang, Shengxue,Xiong, Wenqi,et al. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18:27750-27753. |
APA | Wang, Cong.,Yang, Shengxue.,Xiong, Wenqi.,Xia, Congxin.,Cai, Hui.,...&Liu, Qian.(2016).Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18,27750-27753. |
MLA | Wang, Cong,et al."Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18(2016):27750-27753. |
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