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Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions
Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin
刊名PHYSICAL CHEMISTRY CHEMICAL PHYSICS
2016
卷号18页码:27750-27753
ISSN号1463-9076
DOI10.1039/c6cp04752a
URL标识查看原文
收录类别SCIE ; PUBMED
WOS记录号WOS:000385180600007
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5956477
专题北京航空航天大学
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GB/T 7714
Wang, Cong,Yang, Shengxue,Xiong, Wenqi,et al. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18:27750-27753.
APA Wang, Cong.,Yang, Shengxue.,Xiong, Wenqi.,Xia, Congxin.,Cai, Hui.,...&Liu, Qian.(2016).Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18,27750-27753.
MLA Wang, Cong,et al."Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18(2016):27750-27753.
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