| The role of Ga partial substitution for Al in the enhanced conductivity of transparent AZO thin film | |
| Du, Xiaoyan; Li, Jin; Bi, Xiaofang | |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 2017 | |
| 卷号 | 698页码:128-132 |
| 关键词 | Thin films Vapor deposition Electrical transport Electron-electron interactions Photoelectron spectroscopies |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2016.12.248 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| WOS记录号 | WOS:000393586300019 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5942520 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Du, Xiaoyan,Li, Jin,Bi, Xiaofang. The role of Ga partial substitution for Al in the enhanced conductivity of transparent AZO thin film[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,698:128-132. |
| APA | Du, Xiaoyan,Li, Jin,&Bi, Xiaofang.(2017).The role of Ga partial substitution for Al in the enhanced conductivity of transparent AZO thin film.JOURNAL OF ALLOYS AND COMPOUNDS,698,128-132. |
| MLA | Du, Xiaoyan,et al."The role of Ga partial substitution for Al in the enhanced conductivity of transparent AZO thin film".JOURNAL OF ALLOYS AND COMPOUNDS 698(2017):128-132. |
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