| Electrochemical studies of silicon nitride electron blocking layer for all-solid-state inorganic electrochromic device | |
| Huang, Qingjiao; Dong, Guobo; Xiao, Yu; Diao, Xungang | |
| 刊名 | 10th International Symposium on Electrochemical Impedance Spectroscopy (EIS)
 |
| 2017 | |
| 卷号 | 252页码:331-337 |
| 关键词 | Electrochromic device Monolithic Silicon nitride Leakage current Electrochemical property |
| ISSN号 | 0013-4686 |
| DOI | 10.1016/j.electacta.2017.08.177 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| WOS记录号 | WOS:000413009800039 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5937532 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Huang, Qingjiao,Dong, Guobo,Xiao, Yu,et al. Electrochemical studies of silicon nitride electron blocking layer for all-solid-state inorganic electrochromic device[J]. 10th International Symposium on Electrochemical Impedance Spectroscopy (EIS),2017,252:331-337. |
| APA | Huang, Qingjiao,Dong, Guobo,Xiao, Yu,&Diao, Xungang.(2017).Electrochemical studies of silicon nitride electron blocking layer for all-solid-state inorganic electrochromic device.10th International Symposium on Electrochemical Impedance Spectroscopy (EIS),252,331-337. |
| MLA | Huang, Qingjiao,et al."Electrochemical studies of silicon nitride electron blocking layer for all-solid-state inorganic electrochromic device".10th International Symposium on Electrochemical Impedance Spectroscopy (EIS) 252(2017):331-337. |
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