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	The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam
	Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun
刊名	20th International Conference on Ion Beam Modification of Materials (IBMM)
	2017
卷号	409页码:277-281
关键词	Molecular dynamics Strain rate Tensile load velocity Stress distribution
ISSN号	0168-583X
DOI	10.1016/j.nimb.2017.04.048
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000413279700058
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5937528
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Liang, Guoying,Shen, Jie,Zhang, Jie,et al. The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam[J]. 20th International Conference on Ion Beam Modification of Materials (IBMM),2017,409:277-281.
APA	Liang, Guoying.,Shen, Jie.,Zhang, Jie.,Zhong, Haowen.,Cui, Xiaojun.,...&Le, Xiaoyun.(2017).The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam.20th International Conference on Ion Beam Modification of Materials (IBMM),409,277-281.
MLA	Liang, Guoying,et al."The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam".20th International Conference on Ion Beam Modification of Materials (IBMM) 409(2017):277-281.

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