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	Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant
	Wang, Rong; Guo, Yikun; Zhang, Di; Zhou, Huiqiong; Zhao, Dahui; Zhang, Yuan
刊名	MACROMOLECULAR RAPID COMMUNICATIONS
	2018
卷号	39页码:e1700726
关键词	contact resistance dimer dopant N-doping n-type OFET P(NDI-DPP)
ISSN号	1022-1336
DOI	10.1002/marc.201700726
URL标识	查看原文
收录类别	SCIE ; PUBMED
WOS记录号	WOS:000439816900005
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5935694
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Wang, Rong,Guo, Yikun,Zhang, Di,et al. Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant[J]. MACROMOLECULAR RAPID COMMUNICATIONS,2018,39:e1700726.
APA	Wang, Rong,Guo, Yikun,Zhang, Di,Zhou, Huiqiong,Zhao, Dahui,&Zhang, Yuan.(2018).Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant.MACROMOLECULAR RAPID COMMUNICATIONS,39,e1700726.
MLA	Wang, Rong,et al."Improved Electron Transport with Reduced Contact Resistance in N-Doped Polymer Field-Effect Transistors with a Dimeric Dopant".MACROMOLECULAR RAPID COMMUNICATIONS 39(2018):e1700726.

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