Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage | |
Gao, Tianqi; Zeng, Lang; Zhang, Deming; Qin, Xiaowan; Long, Mingzhi; Zhang, Yue; Lin, Xiaoyang; Zhang, Youguang; Zhao, Weisheng | |
刊名 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
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2018 | |
卷号 | 6页码:245-249 |
关键词 | Negative capacitance effect voltage controlled magnetic anisotropy effect all spin logic devices ultra-low voltage Internet of Things |
ISSN号 | 2168-6734 |
DOI | 10.1109/JEDS.2018.2793902 |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
WOS记录号 | WOS:000428654200003 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5935182 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Gao, Tianqi,Zeng, Lang,Zhang, Deming,et al. Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2018,6:245-249. |
APA | Gao, Tianqi.,Zeng, Lang.,Zhang, Deming.,Qin, Xiaowan.,Long, Mingzhi.,...&Zhao, Weisheng.(2018).Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,6,245-249. |
MLA | Gao, Tianqi,et al."Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6(2018):245-249. |
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