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	Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage
	Gao, Tianqi; Zeng, Lang; Zhang, Deming; Qin, Xiaowan; Long, Mingzhi; Zhang, Yue; Lin, Xiaoyang; Zhang, Youguang; Zhao, Weisheng
刊名	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
	2018
卷号	6页码:245-249
关键词	Negative capacitance effect voltage controlled magnetic anisotropy effect all spin logic devices ultra-low voltage Internet of Things
ISSN号	2168-6734
DOI	10.1109/JEDS.2018.2793902
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000428654200003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5935182
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Gao, Tianqi,Zeng, Lang,Zhang, Deming,et al. Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2018,6:245-249.
APA	Gao, Tianqi.,Zeng, Lang.,Zhang, Deming.,Qin, Xiaowan.,Long, Mingzhi.,...&Zhao, Weisheng.(2018).Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,6,245-249.
MLA	Gao, Tianqi,et al."Negative Capacitance Enhanced All Spin Logic Devices With an Ultra-Low 1 mV Working Voltage".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6(2018):245-249.

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