Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain

	Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain
	Han, GQ ; Su, SJ ; Zhou, Q ; Guo, PF ; Yang, Y ; Zhan, CL ; Wang, LX ; Wang, W ; Wang, QM ; Xue, CL ; Cheng, BW ; Yeo, YC
刊名	ieee electron device letters
	2012
卷号	33 期号:5 页码:634-636
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23636]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Han, GQ,Su, SJ,Zhou, Q,et al. Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain[J]. ieee electron device letters,2012,33(5):634-636.
APA	Han, GQ.,Su, SJ.,Zhou, Q.,Guo, PF.,Yang, Y.,...&Yeo, YC.(2012).Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain.ieee electron device letters,33(5),634-636.
MLA	Han, GQ,et al."Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain".ieee electron device letters 33.5(2012):634-636.