Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

	Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer
	Zhang, JY ; Wang, XF ; Wang, XD ; Ma, HL ; Fu, YC ; Ji, A ; Song, ZT ; Feng, SL ; Yang, FH
刊名	japanese journal of applied physics
	2012
卷号	51 期号:2，part 1 页码:24302
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23609]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Zhang, JY,Wang, XF,Wang, XD,et al. Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer[J]. japanese journal of applied physics,2012,51(2，part 1):24302.
APA	Zhang, JY.,Wang, XF.,Wang, XD.,Ma, HL.,Fu, YC.,...&Yang, FH.(2012).Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer.japanese journal of applied physics,51(2，part 1),24302.
MLA	Zhang, JY,et al."Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer".japanese journal of applied physics 51.2，part 1(2012):24302.