Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field

	Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field
	Dou, XM ; Sun, BQ ; Jiang, DS ; Ni, HQ ; Niu, ZC
刊名	journal of applied physics
	2012
卷号	111 期号:5 页码:53524
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23585]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Dou, XM,Sun, BQ,Jiang, DS,et al. Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field[J]. journal of applied physics,2012,111(5):53524.
APA	Dou, XM,Sun, BQ,Jiang, DS,Ni, HQ,&Niu, ZC.(2012).Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field.journal of applied physics,111(5),53524.
MLA	Dou, XM,et al."Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field".journal of applied physics 111.5(2012):53524.