Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality | |
Chen, Xing; Kang, Wang; Zhu, Daoqian; Zhang, Xichao; Lei, Na; Zhang, Youguang; Zhou, Yan; Zhao, Weisheng | |
刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES |
2018 | |
卷号 | 65页码:4667-4673 |
关键词 | Data update magnetic Skyrmion (Sk) racetrack memory (RM) voltage control |
ISSN号 | 0018-9383 |
DOI | 10.1109/TED.2018.2866912 |
URL标识 | 查看原文 |
收录类别 | SCIE |
WOS记录号 | WOS:000445239700088 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5930017 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Chen, Xing,Kang, Wang,Zhu, Daoqian,et al. Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:4667-4673. |
APA | Chen, Xing.,Kang, Wang.,Zhu, Daoqian.,Zhang, Xichao.,Lei, Na.,...&Zhao, Weisheng.(2018).Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,4667-4673. |
MLA | Chen, Xing,et al."Complementary Skyrmion Racetrack Memory Enables Voltage-Controlled Local Data Update Functionality".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):4667-4673. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论