Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres

	Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
	Wei, TB ; Chen, Y ; Hu, Q ; Yang, JK ; Huo, ZQ ; Duan, RF ; Wang, JX ; Zeng, YP ; Li, JM ; Liao, YX ; Yin, FT
刊名	materials letters
	2012
卷号	68 页码:327-330
学科主题	半导体材料
收录类别	SCI
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23651]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Wei, TB,Chen, Y,Hu, Q,et al. Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres[J]. materials letters,2012,68:327-330.
APA	Wei, TB.,Chen, Y.,Hu, Q.,Yang, JK.,Huo, ZQ.,...&Yin, FT.(2012).Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres.materials letters,68,327-330.
MLA	Wei, TB,et al."Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres".materials letters 68(2012):327-330.