Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres

	Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres
	Zhang, YY ; Li, J ; Wei, TB ; Liu, J ; Yi, XY ; Wang, GH ; Yi, FT
刊名	japanese journal of applied physics
	2012
卷号	51 期号:2，part 1 页码:20204
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23647]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhang, YY,Li, J,Wei, TB,et al. Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres[J]. japanese journal of applied physics,2012,51(2，part 1):20204.
APA	Zhang, YY.,Li, J.,Wei, TB.,Liu, J.,Yi, XY.,...&Yi, FT.(2012).Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres.japanese journal of applied physics,51(2，part 1),20204.
MLA	Zhang, YY,et al."Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres".japanese journal of applied physics 51.2，part 1(2012):20204.