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	Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances-Part II: Impact of Charge Transfer Doping
	Chen, Rongmei; Liang, Jie; Lee, Jaehyun; Georgiev, Vihar P.; Ramos, Raphael; Okuno, Hanako; Kalita, Dipankar; Cheng, Yuanqing; Zhang, Liuyang; Pandey, Reetu R.
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018
卷号	65页码:4963-4970
关键词	Charge transfer doping defects Fermi level Monte Carlo (MC) simulation multiwalled carbon nanotubes (MWCNTs) variability
ISSN号	0018-9383
DOI	10.1109/TED.2018.2868424
URL标识	查看原文
收录类别	SCIE
WOS记录号	WOS:000448030000032
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5929518
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Chen, Rongmei,Liang, Jie,Lee, Jaehyun,et al. Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances-Part II: Impact of Charge Transfer Doping[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:4963-4970.
APA	Chen, Rongmei.,Liang, Jie.,Lee, Jaehyun.,Georgiev, Vihar P..,Ramos, Raphael.,...&Todri-Sanial, Aida.(2018).Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances-Part II: Impact of Charge Transfer Doping.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,4963-4970.
MLA	Chen, Rongmei,et al."Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances-Part II: Impact of Charge Transfer Doping".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):4963-4970.

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