A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM | |
Zhang, He; Kang, Wang; Zhang, Youguang; Chang, Meng-Fan; Zhao, Weisheng | |
刊名 | IEEE ACCESS
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2018 | |
卷号 | 6页码:64250-64260 |
关键词 | Read reliability read disturbance sensing circuit sensing margin STT-RAM |
ISSN号 | 2169-3536 |
DOI | 10.1109/ACCESS.2018.2878012 |
URL标识 | 查看原文 |
收录类别 | SCIE |
WOS记录号 | WOS:000451524900001 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5928432 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Zhang, He,Kang, Wang,Zhang, Youguang,et al. A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM[J]. IEEE ACCESS,2018,6:64250-64260. |
APA | Zhang, He,Kang, Wang,Zhang, Youguang,Chang, Meng-Fan,&Zhao, Weisheng.(2018).A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM.IEEE ACCESS,6,64250-64260. |
MLA | Zhang, He,et al."A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM".IEEE ACCESS 6(2018):64250-64260. |
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