| A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM | |
| Zhang, He; Kang, Wang; Zhang, Youguang; Chang, Meng-Fan; Zhao, Weisheng | |
| 刊名 | IEEE ACCESS
 |
| 2018 | |
| 卷号 | 6页码:64250-64260 |
| 关键词 | Read reliability read disturbance sensing circuit sensing margin STT-RAM |
| ISSN号 | 2169-3536 |
| DOI | 10.1109/ACCESS.2018.2878012 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| WOS记录号 | WOS:000451524900001 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5928432 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Zhang, He,Kang, Wang,Zhang, Youguang,et al. A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM[J]. IEEE ACCESS,2018,6:64250-64260. |
| APA | Zhang, He,Kang, Wang,Zhang, Youguang,Chang, Meng-Fan,&Zhao, Weisheng.(2018).A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM.IEEE ACCESS,6,64250-64260. |
| MLA | Zhang, He,et al."A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM".IEEE ACCESS 6(2018):64250-64260. |
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