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	The Design and Analysis of a Novel Micro Force Sensor Based on Depletion Type Movable Gate Field Effect Transistor
	Gao, Wendi; Jia, Chen; Jiang, Zhuangde; Zhou, Xiangyang; Zhao, Libo; Sun, Dong
刊名	JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
	2019
卷号	28页码:298-310
关键词	Ultra-low force sensor high measuring sensitivity movable gate depletion type field effect transistor
ISSN号	1057-7157
DOI	10.1109/JMEMS.2019.2899621
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000463623600015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5920668
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Gao, Wendi,Jia, Chen,Jiang, Zhuangde,et al. The Design and Analysis of a Novel Micro Force Sensor Based on Depletion Type Movable Gate Field Effect Transistor[J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS,2019,28:298-310.
APA	Gao, Wendi,Jia, Chen,Jiang, Zhuangde,Zhou, Xiangyang,Zhao, Libo,&Sun, Dong.(2019).The Design and Analysis of a Novel Micro Force Sensor Based on Depletion Type Movable Gate Field Effect Transistor.JOURNAL OF MICROELECTROMECHANICAL SYSTEMS,28,298-310.
MLA	Gao, Wendi,et al."The Design and Analysis of a Novel Micro Force Sensor Based on Depletion Type Movable Gate Field Effect Transistor".JOURNAL OF MICROELECTROMECHANICAL SYSTEMS 28(2019):298-310.

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