Spintronic Processing Unit Within Voltage-Gated Spin Hall Effect MRAMs | |
Zhang, He; Kang, Wang; Wu, Bi; Ouyang, Peng; Deng, Erya; Zhang, Youguang; Zhao, Weisheng | |
刊名 | IEEE TRANSACTIONS ON NANOTECHNOLOGY
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2019 | |
卷号 | 18页码:473-483 |
关键词 | Spintronic processing unit (SPU) voltage-gated Spin Hall Effect MRAMs processing-in-memory (PIM) non-von-Neumann computing architectures |
ISSN号 | 1536-125X |
DOI | 10.1109/TNANO.2019.2914009 |
URL标识 | 查看原文 |
收录类别 | SCIE ; EI |
WOS记录号 | WOS:000468239200003 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5919212 |
专题 | 北京航空航天大学 |
推荐引用方式 GB/T 7714 | Zhang, He,Kang, Wang,Wu, Bi,et al. Spintronic Processing Unit Within Voltage-Gated Spin Hall Effect MRAMs[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY,2019,18:473-483. |
APA | Zhang, He.,Kang, Wang.,Wu, Bi.,Ouyang, Peng.,Deng, Erya.,...&Zhao, Weisheng.(2019).Spintronic Processing Unit Within Voltage-Gated Spin Hall Effect MRAMs.IEEE TRANSACTIONS ON NANOTECHNOLOGY,18,473-483. |
MLA | Zhang, He,et al."Spintronic Processing Unit Within Voltage-Gated Spin Hall Effect MRAMs".IEEE TRANSACTIONS ON NANOTECHNOLOGY 18(2019):473-483. |
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