| Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation | |
| Xu, Congwen; Ma, Qishuang; Xu, Ping; Cui, Tongkai | |
| 刊名 | ELECTRONICS
 |
| 2019 | |
| 卷号 | 8 |
| 关键词 | power converters EMI intelligent control classical gate driver interference sources |
| ISSN号 | 2079-9292 |
| DOI | 10.3390/electronics8050508 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| WOS记录号 | WOS:000470999900039 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5919026 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Xu, Congwen,Ma, Qishuang,Xu, Ping,et al. Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation[J]. ELECTRONICS,2019,8. |
| APA | Xu, Congwen,Ma, Qishuang,Xu, Ping,&Cui, Tongkai.(2019).Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation.ELECTRONICS,8. |
| MLA | Xu, Congwen,et al."Shaping SiC MOSFET Voltage and Current Transitions by Intelligent Control for Reduced EMI Generation".ELECTRONICS 8(2019). |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论