QQ客服 官方微博 反馈留言

	Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2
	Xu, Liping; Zhang, Peng; Jiang, Huaning; Wang, Xiang; Chen, Fangfang; Hu, Zhigao; Gong, Yongji; Shang, Liyan; Zhang, Jinzhong; Jiang, Kai
刊名	SMALL
	2019
卷号	15页码:e1904116
关键词	chemical vapor deposition field-effect transistors large scale SnS2 van der Waals layered materials
ISSN号	1613-6810
DOI	10.1002/smll.201904116
URL标识	查看原文
收录类别	SCIE ; EI ; PUBMED
WOS记录号	WOS:000497362200023
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5915610
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Xu, Liping,Zhang, Peng,Jiang, Huaning,et al. Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2[J]. SMALL,2019,15:e1904116.
APA	Xu, Liping.,Zhang, Peng.,Jiang, Huaning.,Wang, Xiang.,Chen, Fangfang.,...&Chu, Junhao.(2019).Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2.SMALL,15,e1904116.
MLA	Xu, Liping,et al."Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2".SMALL 15(2019):e1904116.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。