Investigation on the properties of Nb and Al doped Ti3SiC2 as a new interconnect material for IT-SOFC

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	Investigation on the properties of Nb and Al doped Ti3SiC2 as a new interconnect material for IT-SOFC
	L. L. Zheng ; J. J. Li ; M. S. Li ; Y. C. Zhou
刊名	International Journal of Hydrogen Energy
	2012
卷号	37 期号:1 页码:1084-1088
关键词	MAX phase Interconnect SOFC Oxidation Area specific resistance oxide fuel-cells alloy interconnects air
ISSN号	0360-3199
中文摘要	A modified layered ternary compound (Ti0.98Nb0.02)(3)(Si0.95Al0.05)C-2 was evaluated as a new interconnect material for intermediate temperature solid oxide fuel cells (IT-SOFC). The results indicated that the compound has low density (4.50 g/cm(3)), closer matched thermal expansion coefficient with Y2O3 stabled ZrO2 (9.0 x 10(-6)/K), low room temperature electrical resistivity (24 mu Omega cm), and good mechanical properties and machinability. During the isothermal oxidation at 600 degrees C-800 degrees C, a monolithic layer with the mixture of rutile TiO2 and amorphous SiO2 formed on (Ti0.98Nb0.02)(3)(Si0.95Al0.05)C-2. Its oxidation kinetics roughly follows a parabolic law, the rate constant is 0.45, 1.26, 1.57 x 10(-7) mg(2)/cm(4) s at 600 degrees C, 700 degrees C, 800 degrees C, respectively. After the oxidation at 700 degrees C and 800 degrees C in air for 100 h, its area special resistance is 5 and 12 m Omega cm(2) at the corresponding oxidation temperature, respectively. In oxidizing environment, (Ti0.98Nb0.02)(3)(Si(0.95)A(10.05))C-2 is very stable, and has not Cr or other element volatilization. All above determined properties of (Ti0.98Nb0.02)3 (Si0.95Al0.05)C-2 are favorable for its application as interconnect in IT-SOFC. Copyright (C) 2011, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
原文出处	://WOS:000300470000129
公开日期	2013-02-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/60499]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	L. L. Zheng,J. J. Li,M. S. Li,et al. Investigation on the properties of Nb and Al doped Ti3SiC2 as a new interconnect material for IT-SOFC[J]. International Journal of Hydrogen Energy,2012,37(1):1084-1088.
APA	L. L. Zheng,J. J. Li,M. S. Li,&Y. C. Zhou.(2012).Investigation on the properties of Nb and Al doped Ti3SiC2 as a new interconnect material for IT-SOFC.International Journal of Hydrogen Energy,37(1),1084-1088.
MLA	L. L. Zheng,et al."Investigation on the properties of Nb and Al doped Ti3SiC2 as a new interconnect material for IT-SOFC".International Journal of Hydrogen Energy 37.1(2012):1084-1088.