Multiferroic tunnel junctions

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	Multiferroic tunnel junctions
	Y. W. Yin ; M. Raju ; W. J. Hu ; X. J. Weng ; K. Zou ; J. Zhu ; X. G. Li ; Z. D. Zhang ; Q. Li
刊名	Frontiers of Physics
	2012
卷号	7 期号:4 页码:380-385
关键词	multiferroic tunnel junction ferroelectric film tunneling magnetoresistance effect tunneling electroresisitance effect magnetoelectric coupling complex oxide heterostructures ferroelectric control spin polarization room-temperature barriers films interfaces states
ISSN号	2095-0462
中文摘要	Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.
原文出处	://WOS:000307438200003
公开日期	2013-02-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/60417]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. W. Yin,M. Raju,W. J. Hu,et al. Multiferroic tunnel junctions[J]. Frontiers of Physics,2012,7(4):380-385.
APA	Y. W. Yin.,M. Raju.,W. J. Hu.,X. J. Weng.,K. Zou.,...&Q. Li.(2012).Multiferroic tunnel junctions.Frontiers of Physics,7(4),380-385.
MLA	Y. W. Yin,et al."Multiferroic tunnel junctions".Frontiers of Physics 7.4(2012):380-385.