Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices | |
W. Yao ; K. L. Yao ; G. Y. Gao ; S. C. Zhu ; H. H. Fu | |
刊名 | Journal of Applied Physics
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2012 | |
卷号 | 112期号:10 |
关键词 | half-metallic ferromagnets molecular-beam epitaxy room-temperature spintronics magnetoresistance semiconductors |
ISSN号 | 0021-8979 |
中文摘要 | Motivated by the molecular-beam epitaxial growth of zinc-blend-type CrTe thin films on ZnTe, we present a theoretical study on the spin-polarized transport properties of ZnTe/CrTe p-n junction as spin diode and CrTe/ZnTe/CrTe magnetic tunnel junction for (001) and (011) surfaces. Both ZnTe(001)/CrTe(001) and ZnTe(011)/CrTe(011) p-n junctions show excellent spin diode effect, the majority spin current of positive voltage is much larger than that of negative voltage and the minority spin current is absolutely inhibited. The ZnTe(001)/CrTe(001) p-n junction has lower "turn off" current and higher rectification ratio (about 10 5) than the ZnTe(011)/CrTe(011) which shows obvious anisotropy. We also find that the tunneling magneto resistance ratio of the CrTe/ZnTe/CrTe magnetic tunnel junction is up to about 4 x 10(9)%. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767935] |
原文出处 | |
公开日期 | 2013-02-05 |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/60413] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | W. Yao,K. L. Yao,G. Y. Gao,et al. Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices[J]. Journal of Applied Physics,2012,112(10). |
APA | W. Yao,K. L. Yao,G. Y. Gao,S. C. Zhu,&H. H. Fu.(2012).Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices.Journal of Applied Physics,112(10). |
MLA | W. Yao,et al."Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices".Journal of Applied Physics 112.10(2012). |
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