CORC  > 金属研究所  > 中国科学院金属研究所
Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices
W. Yao ; K. L. Yao ; G. Y. Gao ; S. C. Zhu ; H. H. Fu
刊名Journal of Applied Physics
2012
卷号112期号:10
关键词half-metallic ferromagnets molecular-beam epitaxy room-temperature spintronics magnetoresistance semiconductors
ISSN号0021-8979
中文摘要Motivated by the molecular-beam epitaxial growth of zinc-blend-type CrTe thin films on ZnTe, we present a theoretical study on the spin-polarized transport properties of ZnTe/CrTe p-n junction as spin diode and CrTe/ZnTe/CrTe magnetic tunnel junction for (001) and (011) surfaces. Both ZnTe(001)/CrTe(001) and ZnTe(011)/CrTe(011) p-n junctions show excellent spin diode effect, the majority spin current of positive voltage is much larger than that of negative voltage and the minority spin current is absolutely inhibited. The ZnTe(001)/CrTe(001) p-n junction has lower "turn off" current and higher rectification ratio (about 10 5) than the ZnTe(011)/CrTe(011) which shows obvious anisotropy. We also find that the tunneling magneto resistance ratio of the CrTe/ZnTe/CrTe magnetic tunnel junction is up to about 4 x 10(9)%. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767935]
原文出处://WOS:000311969800073
公开日期2013-02-05
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/60413]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
W. Yao,K. L. Yao,G. Y. Gao,et al. Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices[J]. Journal of Applied Physics,2012,112(10).
APA W. Yao,K. L. Yao,G. Y. Gao,S. C. Zhu,&H. H. Fu.(2012).Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices.Journal of Applied Physics,112(10).
MLA W. Yao,et al."Anisotropic transport properties of zinc-blend ZnTe/CrTe heterogeneous junction nanodevices".Journal of Applied Physics 112.10(2012).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace