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	Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering
	Xue, Shoubin[1]; Zhang, Xing[1]; Huang, Ru[1]; Zhuang, Huizhao[2]
	2009
卷号	94期号:2页码:287-291
URL标识	查看原文
WOS记录号	WOS:000261257100013
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5804540
专题	山东师范大学
作者单位	1.[1]Peking Univ, SOI Grp, Inst Microelect, Beijing 100871, Peoples R China 2.[2]Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Xue, Shoubin[1],Zhang, Xing[1],Huang, Ru[1],et al. Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering[J],2009,94(2):287-291.
APA	Xue, Shoubin[1],Zhang, Xing[1],Huang, Ru[1],&Zhuang, Huizhao[2].(2009).Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering.,94(2),287-291.
MLA	Xue, Shoubin[1],et al."Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering".94.2(2009):287-291.

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