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	Molecular dynamics simulations of CH+ions interaction with silicon carbide
	Lu, X.; Qin, Y.; Ning, J.; Zhou, T.; Deng, C.Y.; Meng, Ch.; Qiu, Q.; Chuanwu, Zhang; Ying, Yan; Ming, Jiang
	2009
卷号	267期号:18页码:3242-3244
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5763597
专题	贵州大学
作者单位	1.[1] Institute of Plasma-Surface Interactions, Guizhou University, 550025, China 2.[2] Guiyang Medical College, Guizhou Province 550025, China 3.[3] Southwest University for Nationalities, Sichuan Province, China 4.[4] FOM Institute for Plasma Physics, Rijnhuizen, 3430BE Nieuwgein, Netherlands
推荐引用方式 GB/T 7714	Lu, X.,Qin, Y.,Ning, J.,et al. Molecular dynamics simulations of CH+ions interaction with silicon carbide[J],2009,267(18):3242-3244.
APA	Lu, X..,Qin, Y..,Ning, J..,Zhou, T..,Deng, C.Y..,...&Gou, F..(2009).Molecular dynamics simulations of CH+ions interaction with silicon carbide.,267(18),3242-3244.
MLA	Lu, X.,et al."Molecular dynamics simulations of CH+ions interaction with silicon carbide".267.18(2009):3242-3244.

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