| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation | |
| Zhou, Huiying; Qu, Shengchun*; Jin, Peng; Xu, Bo; Ye, Xiaoling; Liu, Junpeng; Wang, Zhanguo | |
| 刊名 | Journal of Crystal Growth
 |
| 2011 | |
| 卷号 | 318期号:1页码:572-575 |
| 关键词 | A1. Atom force microscopy A1. Nanostructures A3. Molecular-beam epitaxy B1. Nanomaterials B2. Semiconducting gallium arsenide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2010.10.176 |
| 会议名称 | 16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14) |
| URL标识 | 查看原文 |
| 会议地点 | Beijing, PEOPLES R CHINA |
| 会议日期 | AUG 08-13, 2010 |
| WOS记录号 | WOS:000289653900121;EI:20111213767816 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5726559 |
| 专题 | 中南林业科技大学 |
| 作者单位 | 1.[Ye, Xiaoling 2.Xu, Bo 3.Zhou, Huiying 4.Wang, Zhanguo 5.Qu, Shengchun 6.Jin, Peng 7.Liu, Junpeng] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhou, Huiying,Qu, Shengchun*,Jin, Peng,et al. Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation[J]. Journal of Crystal Growth,2011,318(1):572-575. |
| APA | Zhou, Huiying.,Qu, Shengchun*.,Jin, Peng.,Xu, Bo.,Ye, Xiaoling.,...&Wang, Zhanguo.(2011).Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation.Journal of Crystal Growth,318(1),572-575. |
| MLA | Zhou, Huiying,et al."Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation".Journal of Crystal Growth 318.1(2011):572-575. |
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