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	Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors
	Liu, Yuan; He, Hongyu; Chen, Rongsheng*; En, Yun-Fei; Li, Bin; Chen, Yi-Qiang*
刊名	IEEE Journal of the Electron Devices Society
	2018
卷号	6期号:1页码:271-279
关键词	Indium-zinc-oxide thin film transistor low frequency noise BSIM
ISSN号	2168-6734
DOI	10.1109/JEDS.2018.2800049
URL标识	查看原文
WOS记录号	WOS:000428654200007;EI:20180604771820
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5676785
专题	南华大学
作者单位	1.[Liu, Yuan 2.Chen, Rongsheng] South China Univ Technol, Sch Microelect, Guangzhou 510640, Guangdong, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Yuan,He, Hongyu,Chen, Rongsheng*,et al. Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors[J]. IEEE Journal of the Electron Devices Society,2018,6(1):271-279.
APA	Liu, Yuan,He, Hongyu,Chen, Rongsheng*,En, Yun-Fei,Li, Bin,&Chen, Yi-Qiang*.(2018).Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors.IEEE Journal of the Electron Devices Society,6(1),271-279.
MLA	Liu, Yuan,et al."Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors".IEEE Journal of the Electron Devices Society 6.1(2018):271-279.

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