QQ客服 官方微博 反馈留言

	Trench isotope cell electrode manufacturing method, involves executing thermal oxidization to silicon dioxide mask layer on surface of P type silicon, and sputtering metal sputter to lift off redundant metal of outside of metal electrode.
	PIAO X WANG P CHU J BOK S
	2008
公开日期	2008-05-07
URL标识	查看原文
申请日期	2007-09-14
内容类型	专利
URI标识	http://www.corc.org.cn/handle/1471x/5613730
专题	大连理工大学
作者单位	UNIV DALIAN TECHNOLOGY UNIV DALIAN TECHNOLOGY (UYDA-C
推荐引用方式 GB/T 7714	PIAO X WANG P CHU J BOK S. Trench isotope cell electrode manufacturing method, involves executing thermal oxidization to silicon dioxide mask layer on surface of P type silicon, and sputtering metal sputter to lift off redundant metal of outside of metal electrode.. 2008-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。