CORC  > 武汉轻工大学
An improved CMOS-based inductor simulator with simplified structure for low-frequency applications
Zhong, Longjie*; Lai, Xinquan; Xu, Donglai; Short, Michael; Yuan, Bing; Wang, Zeyu
刊名Journal of Computational Electronics
2016
卷号15期号:3页码:1017-1022
关键词Active inductor CMOS integrated circuits Floating inductor simulator Grounded inductor simulator MOSFET Operational frequency
ISSN号1569-8025
DOI10.1007/s10825-016-0834-1
URL标识查看原文
WOS记录号WOS:000382078200033;EI:20162402480554
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5578648
专题武汉轻工大学
作者单位1.[Lai, Xinquan
2.Wang, Zeyu
3.Zhong, Longjie
4.Yuan, Bing] Xidian Univ, Inst Elect CAD, Xian, Peoples R China.
推荐引用方式
GB/T 7714
Zhong, Longjie*,Lai, Xinquan,Xu, Donglai,et al. An improved CMOS-based inductor simulator with simplified structure for low-frequency applications[J]. Journal of Computational Electronics,2016,15(3):1017-1022.
APA Zhong, Longjie*,Lai, Xinquan,Xu, Donglai,Short, Michael,Yuan, Bing,&Wang, Zeyu.(2016).An improved CMOS-based inductor simulator with simplified structure for low-frequency applications.Journal of Computational Electronics,15(3),1017-1022.
MLA Zhong, Longjie*,et al."An improved CMOS-based inductor simulator with simplified structure for low-frequency applications".Journal of Computational Electronics 15.3(2016):1017-1022.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace