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	Highly thermal stable transparent conducting SnO_2:Sb epitaxial films prepared on α-Al_2O_3 (0001) by MOCVD
	Xianjin Feng; Jin Ma; Fan Yang; Feng Ji; Fujian Zong; Caina Luan; Honglei Ma
刊名	Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials
	2008
卷号	254期号:20页码:6601-6604
关键词	antimony-doped tin oxide films MOCVD annealing
DOI	10.1016/j.apsusc.2008.04.028
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5574376
专题	山东大学
作者单位	1.School of Physics, Shandong University, Jinan, 250100, China 2.School of Physics, Shandong University, Jinan, 250100, China 3.[ Yang, F
推荐引用方式 GB/T 7714	Xianjin Feng,Jin Ma,Fan Yang,et al. Highly thermal stable transparent conducting SnO_2:Sb epitaxial films prepared on α-Al_2O_3 (0001) by MOCVD[J]. Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008,254(20):6601-6604.
APA	Xianjin Feng.,Jin Ma.,Fan Yang.,Feng Ji.,Fujian Zong.,...&Honglei Ma.(2008).Highly thermal stable transparent conducting SnO_2:Sb epitaxial films prepared on α-Al_2O_3 (0001) by MOCVD.Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,254(20),6601-6604.
MLA	Xianjin Feng,et al."Highly thermal stable transparent conducting SnO_2:Sb epitaxial films prepared on α-Al_2O_3 (0001) by MOCVD".Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials 254.20(2008):6601-6604.

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