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	Atomic geometry and electronic structure of defects in Zn3N2
	Long R; Dai Y; Yu L; Huang B; Han S
刊名	Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films
	2008
卷号	516期号:6页码:1297-1301
关键词	Zn3N2 electronic and optical properties native defect OPTICAL BAND-GAP MOLECULES FILMS PHOTOLUMINESCENCE SOLIDS
DOI	10.1016/j.tsf.2007.06.107
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5572090
专题	山东大学
作者单位	1.School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China 2.Schoo
推荐引用方式 GB/T 7714	Long R,Dai Y,Yu L,et al. Atomic geometry and electronic structure of defects in Zn3N2[J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008,516(6):1297-1301.
APA	Long R,Dai Y,Yu L,Huang B,&Han S.(2008).Atomic geometry and electronic structure of defects in Zn3N2.Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,516(6),1297-1301.
MLA	Long R,et al."Atomic geometry and electronic structure of defects in Zn3N2".Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 516.6(2008):1297-1301.

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