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	Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering
	Liu, Hanfa; Zhang, Huafu; Lei, Chengxin; Yuan, Changkun
刊名	Journal of Semiconductors
	2009
卷号	30期号:2
DOI	10.1088/1674-4926/30/2/023001
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5525158
专题	山东大学
作者单位	School of Physics and Optic-Electronic Information, Shandong University of Technology, Zibo
推荐引用方式 GB/T 7714	Liu, Hanfa,Zhang, Huafu,Lei, Chengxin,et al. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J]. Journal of Semiconductors,2009,30(2).
APA	Liu, Hanfa,Zhang, Huafu,Lei, Chengxin,&Yuan, Changkun.(2009).Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering.Journal of Semiconductors,30(2).
MLA	Liu, Hanfa,et al."Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering".Journal of Semiconductors 30.2(2009).

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