Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE | |
Qu, Shuang; Li, Shuqiang; Peng, Yan; Zhu, Xueliang; Hu, Xiaobo; Wang, Chengxin; Chen, Xiufang; Gao, Yuqiang; Xu, Xiangang | |
刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
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2010 | |
卷号 | 502期号:2页码:417-422 |
关键词 | Organometallic vapor phase epitaxy Nitrides Semiconducting silicon compounds High-resolution X-ray diffraction |
DOI | 10.1016/j.jallcom.2010.04.185 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5507152 |
专题 | 山东大学 |
作者单位 | Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, P |
推荐引用方式 GB/T 7714 | Qu, Shuang,Li, Shuqiang,Peng, Yan,et al. Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2010,502(2):417-422. |
APA | Qu, Shuang.,Li, Shuqiang.,Peng, Yan.,Zhu, Xueliang.,Hu, Xiaobo.,...&Xu, Xiangang.(2010).Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE.JOURNAL OF ALLOYS AND COMPOUNDS,502(2),417-422. |
MLA | Qu, Shuang,et al."Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE".JOURNAL OF ALLOYS AND COMPOUNDS 502.2(2010):417-422. |
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