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	Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE
	Qu, Shuang; Li, Shuqiang; Peng, Yan; Zhu, Xueliang; Hu, Xiaobo; Wang, Chengxin; Chen, Xiufang; Gao, Yuqiang; Xu, Xiangang
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2010
卷号	502期号:2页码:417-422
关键词	Organometallic vapor phase epitaxy Nitrides Semiconducting silicon compounds High-resolution X-ray diffraction
DOI	10.1016/j.jallcom.2010.04.185
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5507152
专题	山东大学
作者单位	Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, P
推荐引用方式 GB/T 7714	Qu, Shuang,Li, Shuqiang,Peng, Yan,et al. Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2010,502(2):417-422.
APA	Qu, Shuang.,Li, Shuqiang.,Peng, Yan.,Zhu, Xueliang.,Hu, Xiaobo.,...&Xu, Xiangang.(2010).Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE.JOURNAL OF ALLOYS AND COMPOUNDS,502(2),417-422.
MLA	Qu, Shuang,et al."Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H-SiC substrate by MOVPE".JOURNAL OF ALLOYS AND COMPOUNDS 502.2(2010):417-422.

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