Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering | |
Zhang, Huafu; Liu, Hanfa; Feng, Liu | |
刊名 | VACUUM
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2010 | |
卷号 | 84期号:6页码:833-836 |
关键词 | Zirconium-doped zinc oxide Annealing temperature DC magnetron sputtering Thin films |
DOI | 10.1016/j.vacuum.2009.11.005 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5488746 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China. 2.Shandong Univ Technol, Anal & Testin |
推荐引用方式 GB/T 7714 | Zhang, Huafu,Liu, Hanfa,Feng, Liu. Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering[J]. VACUUM,2010,84(6):833-836. |
APA | Zhang, Huafu,Liu, Hanfa,&Feng, Liu.(2010).Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering.VACUUM,84(6),833-836. |
MLA | Zhang, Huafu,et al."Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering".VACUUM 84.6(2010):833-836. |
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